NTH4L045N065SC1
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NTH4L045N065SC1
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NTH4L045N065SC1

Brand:ON
Model:NTH4L045N065SC1
stock:3137
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-247-4L
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 55A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 15V,18V
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 25A,18V
Vgs (th) (maximum) for different Ids 4.3V @ 8mA
Gate charge (Qg) at different Vgs (maximum) 105 nC @ 18 V
Vgs (max) +22V,-8V
Input capacitance at different Vds (Ciss) (maximum) 1870 pF @ 325 V
Power dissipation (maximum) 187W(Tc)
Common problem
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