| Installation type | Through-Hole |
| packing | pipe |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | TO-247-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
| On resistance (maximum) for different Ids and Vgs | 56mΩ @ 35A,20V |
| Vgs (th) (maximum) for different Ids | 4,3V @ 10mA |
| Gate charge (Qg) at different Vgs (maximum) | 106 nC @ 20 V |
| Vgs (max) | +25V,-15V |
| Input capacitance at different Vds (Ciss) (maximum) | 1781 pF @ 800 V |
| Power dissipation (maximum) | 348W(Tc) |