FQB47P06TM-AM002
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FQB47P06TM-AM002
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FQB47P06TM-AM002

Brand:ON
Model:FQB47P06TM-AM002
stock:87934
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series QFET®
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 47A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 26 mΩ @ 23.5A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 110 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 3600 pF @ 25 V
Power dissipation (maximum) 3.75W(Ta),160W(Tc)
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