| Installation type | Surface mount |
| packing | TR,CT,bulk |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | ChipFET™ |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 5.2A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 30 mΩ @ 5.2A,4.5V |
| Vgs (th) (maximum) for different Ids | 600mV @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 18 nC @ 4.5 V |
| Vgs (max) | ±12V |
| Power dissipation (maximum) | 1.3W(Ta) |