Installation type | Surface mount |
packing | TR,CT |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D2PAK(TO-263) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 35A(Ta),267A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V,12V |
On resistance (maximum) for different Ids and Vgs | 1.55 mΩ @ 64A,12V |
Vgs (th) (maximum) for different Ids | 4V @ 318µA |
Gate charge (Qg) at different Vgs (maximum) | 78.6 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 6250 pF @ 30 V |
Power dissipation (maximum) | 3.7W(Ta),211W(Tc) |