NVF6P02T3G
Home
Category
MOSFET
NVF6P02T3G
The pictures are for reference only

NVF6P02T3G

Brand:ON
Model:NVF6P02T3G
stock:58442
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101
Part status Not applicable to new design
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-223(TO-261)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 10A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 6A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 20 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 1200 pF @ 16 V
Power dissipation (maximum) 8.3W(Ta)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification