| Installation type | Surface mount |
| packing | TR,CT |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PQFN(3.3x3.3) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 25 V |
| Current at 25 ° C - continuous drain (Id) | 23A(Ta),180A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 1 mΩ @ 38A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 934µA |
| Gate charge (Qg) at different Vgs (maximum) | 24 nC @ 4.5 V |
| Vgs (max) | +16V,-12V |
| Input capacitance at different Vds (Ciss) (maximum) | 4040 pF @ 13 V |
| Power dissipation (maximum) | 820mW(Ta),52W(Tc) |