Installation type | Surface mount |
packing | TR,CT |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D2PAK-7 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 900 V |
Current at 25 ° C - continuous drain (Id) | 5.8A(Ta),44A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 15V |
On resistance (maximum) for different Ids and Vgs | 84 mΩ @ 20A,15V |
Vgs (th) (maximum) for different Ids | 4.3V @ 5mA |
Gate charge (Qg) at different Vgs (maximum) | 88 nC @ 15 V |
Vgs (max) | +19V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 1800 pF @ 450 V |
Power dissipation (maximum) | 3.6W(Ta),211W(Tc) |