| Installation type | Surface mount |
| packing | TR,CT,bulk |
| Part status | Final sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | SOT-883(XDFN3)(1x0.6) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 281mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 1.3 Ω @ 200mA,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 1.1 nC @ 4.5 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 44 pF @ 10 V |
| Power dissipation (maximum) | 155mW(Ta) |