FDD5614P
Home
Category
MOSFET
FDD5614P
The pictures are for reference only

FDD5614P

Brand:ON
Model:FDD5614P
stock:33660
Store:ShenZhen/Hongkong
Price:1+
$0.24
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series PowerTrench®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-252AA
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 15A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 100 mΩ @ 4.5A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 24 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 759 pF @ 30 V
Power dissipation (maximum) 3.8W(Ta),42W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification