FDD10N20LZTM
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FDD10N20LZTM
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FDD10N20LZTM

Brand:ON
Model:FDD10N20LZTM
stock:21388
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT,bulk
series UniFET™
Part status Final sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-252AA
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 7.6A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V,10V
On resistance (maximum) for different Ids and Vgs 360 mΩ @ 3.8A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 585 pF @ 25 V
Power dissipation (maximum) 83W(Tc)
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