NTMYS3D8N04CLTWG
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NTMYS3D8N04CLTWG
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NTMYS3D8N04CLTWG

Brand:ON
Model:NTMYS3D8N04CLTWG
stock:72222
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing LFPAK4(5x6)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 22A(Ta),87A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 3.7 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 18 nC @ 10 V
Vgs (max) 20V
Input capacitance at different Vds (Ciss) (maximum) 1600 pF @ 25 V
Power dissipation (maximum) 3.6W(Ta),55W(Tc)
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