FDI045N10A-F102
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FDI045N10A-F102
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FDI045N10A-F102

Brand:ON
Model:FDI045N10A-F102
stock:63474
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing bulk,pipe
series PowerTrench®
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing I2PAK(TO-262)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 120A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4.5 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 74 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5270 pF @ 50 V
FET function -
Power dissipation (maximum) 263W(Tc)
Common problem
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