| Installation type | Through-Hole | 
| packing | pallet | 
| series | Automotive, AEC-Q101 | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | TO-247-4L | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | SiCFET(silicon carbide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 650 V | 
| Current at 25 ° C - continuous drain (Id) | 142A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V | 
| On resistance (maximum) for different Ids and Vgs | 18 mΩ @ 75A,18V | 
| Vgs (th) (maximum) for different Ids | 4.3V @ 25mA | 
| Gate charge (Qg) at different Vgs (maximum) | 283 nC @ 18 V | 
| Vgs (max) | +22V,-8V | 
| Input capacitance at different Vds (Ciss) (maximum) | 4790 pF @ 325 V | 
| Power dissipation (maximum) | 500W(Tc) |