| Installation type | Surface mount |
| packing | TR,bulk |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-MSOP |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 2.1A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 85 mΩ @ 2.48A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 4.5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 500 pF @ 24 V |
| Power dissipation (maximum) | 600mW(Ta) |