Installation type | Through-Hole |
packing | bulk |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | TO-92-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 500mA(Ta) |
On resistance (maximum) for different Ids and Vgs | 5 Ω @ 200mA,10V |
Vgs (th) (maximum) for different Ids | 3V @ 1mA |
Input capacitance at different Vds (Ciss) (maximum) | 40 pF @ 10 V |
Power dissipation (maximum) | 830mW(Ta) |