FQP5N20L
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FQP5N20L
Brand：ON
Model：FQP5N20L
stock：80941
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | pipe |
| series | QFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-220-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 200 V |
| Current at 25 ° C - continuous drain (Id) | 4.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
| On resistance (maximum) for different Ids and Vgs | 1.2 Ω @ 2.25A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 6.2 nC @ 5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 325 pF @ 25 V |
| Power dissipation (maximum) | 52W(Tc) |
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