| Installation type | Through-Hole | 
| packing | pipe | 
| series | QFET® | 
| Part status | stop production | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | I2PAK(TO-262) | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 150 V | 
| Current at 25 ° C - continuous drain (Id) | 6.4A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 600 mΩ @ 3.2A,10V | 
| Vgs (th) (maximum) for different Ids | 4V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 8.5 nC @ 10 V | 
| Vgs (max) | ±25V | 
| Input capacitance at different Vds (Ciss) (maximum) | 270 pF @ 25 V | 
| Power dissipation (maximum) | 3.75W(Ta),63W(Tc) |