| Installation type | Through-Hole | 
| packing | pipe | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | TO-3P | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 200 V | 
| Current at 25 ° C - continuous drain (Id) | 19.5A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V | 
| On resistance (maximum) for different Ids and Vgs | 230 mΩ @ 9.8A,5V | 
| Vgs (th) (maximum) for different Ids | 2V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 120 nC @ 5 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 3250 pF @ 25 V | 
| Power dissipation (maximum) | 204W(Tc) |