| Installation type | Surface mount |
| packing | TR |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 7A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 35 mΩ @ 5.3A,10V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 75.8 nC @ 6 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 1680 pF @ 24 V |
| Power dissipation (maximum) | 2.5W(Ta) |