| Installation type | Surface mount |
| packing | TR,bulk |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | 4-PLLP(6.2x5.2) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 24 V |
| Current at 25 ° C - continuous drain (Id) | 9.5A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 13 mΩ @ 6A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 25 nC @ 10 V |
| Vgs (max) | ±10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1500 pF @ 6 V |
| FET function | current testing |
| Power dissipation (maximum) | 1.4W(Ta) |