NTJS3157NT4
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NTJS3157NT4
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NTJS3157NT4

Brand:ON
Model:NTJS3157NT4
stock:22367
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-88/SC70-6/SOT-363
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3.2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 60 mΩ @ 4A,4.5V
Vgs (th) (maximum) for different Ids 400mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 15 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 500 pF @ 10 V
Power dissipation (maximum) 1W(Ta)
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