NTMD4884NFR2G
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NTMD4884NFR2G
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NTMD4884NFR2G

Brand:ON
Model:NTMD4884NFR2G
stock:41416
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,bulk
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 3.3A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 48 mΩ @ 4A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 4.2 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 360 pF @ 15 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 770mW(Ta)
Common problem
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