NTMS4920NR2G
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NTMS4920NR2G
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NTMS4920NR2G

Brand:ON
Model:NTMS4920NR2G
stock:52939
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 10.6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.3 mΩ @ 7.5A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 58.9 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4068 pF @ 25 V
Power dissipation (maximum) 820mW(Ta)
Common problem
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