| Installation type | Surface mount | 
| packing | TR | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | 8-WDFN(3.3x3.3) | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 7.5A(Ta),57A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,11.5V | 
| On resistance (maximum) for different Ids and Vgs | 7 mΩ @ 20A,10V | 
| Vgs (th) (maximum) for different Ids | 2.5V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 24 nC @ 11.5 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1755 pF @ 12 V | 
| Power dissipation (maximum) | 660mW(Ta),38.5W(Tc) |