NTMS5P02R2SG
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NTMS5P02R2SG
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NTMS5P02R2SG

Brand:ON
Model:NTMS5P02R2SG
stock:48560
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT,bulk
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3.95A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 33 mΩ @ 5.4A,4.5V
Vgs (th) (maximum) for different Ids 1.25V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 35 nC @ 4.5 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 1900 pF @ 16 V
Power dissipation (maximum) 790mW(Ta)
Common problem
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