| Installation type | Through-Hole |
| packing | CT,TB |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-92(TO-226) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 200 V |
| Current at 25 ° C - continuous drain (Id) | 250mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2V,2.8V |
| On resistance (maximum) for different Ids and Vgs | 8 Ω @ 100mA,2.8V |
| Vgs (th) (maximum) for different Ids | 1.5V @ 1mA |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 150 pF @ 25 V |
| Power dissipation (maximum) | 350mW(Ta) |