| Installation type | Surface mount | 
| packing | TR,TR,bulk | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | DPAK | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 25 V | 
| Current at 25 ° C - continuous drain (Id) | 2.5A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | 
| On resistance (maximum) for different Ids and Vgs | 95 mΩ @ 5A,10V | 
| Vgs (th) (maximum) for different Ids | 2V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 1.8 nC @ 5 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 115 pF @ 20 V | 
| Power dissipation (maximum) | 1.04W(Ta),20.8W(Tc) |