NDDP010N25AZ-1H
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NDDP010N25AZ-1H
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NDDP010N25AZ-1H

Brand:ON
Model:NDDP010N25AZ-1H
stock:8557
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing bulk,bag
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing IPAK/TP
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 250 V
Current at 25 ° C - continuous drain (Id) 10A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 420 mΩ @ 5A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 980 pF @ 20 V
Power dissipation (maximum) 1W(Ta),52W(Tc)
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