NDBA180N10BT4H
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NDBA180N10BT4H
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NDBA180N10BT4H

Brand:ON
Model:NDBA180N10BT4H
stock:15837
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,bulk
Part status stop production
working temperature 175°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 180A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V,15V
On resistance (maximum) for different Ids and Vgs 2.8 mΩ @ 50A,15V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 95 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 6950 pF @ 50 V
Power dissipation (maximum) 200W(Tc)
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