MVB50P03HDLT4G
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MVB50P03HDLT4G
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MVB50P03HDLT4G

Brand:ON
Model:MVB50P03HDLT4G
stock:58130
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing bulk
series Automotive, AEC-Q101
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D²PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 50A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 25 mΩ @ 25A,5V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 100 nC @ 5 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 4900 pF @ 25 V
Power dissipation (maximum) 125W(Tc)
Common problem
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