Installation type | Surface mount |
packing | TR,CT,bulk |
Part status | stop production |
working temperature | 125°C(TJ) |
Encapsulation/Housing | 3-CP |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 50 V |
Current at 25 ° C - continuous drain (Id) | 100mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 20 Ω @ 10mA,10V |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | 15 pF @ 10 V |
Power dissipation (maximum) | 200mW(Ta) |