| Installation type | Surface mount |
| packing | TR,CT,bulk |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 3-CPH |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 200 V |
| Current at 25 ° C - continuous drain (Id) | 500mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
| On resistance (maximum) for different Ids and Vgs | 3.7 Ω @ 250mA,10V |
| Vgs (th) (maximum) for different Ids | 2.6V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 2.4 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 90 pF @ 20 V |
| Power dissipation (maximum) | 1W(Ta) |