Installation type | Surface mount |
packing | TR,CT,bulk |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-WDFN(3.3x3.3) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 25 V |
Current at 25 ° C - continuous drain (Id) | 22.4A(Ta),94A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 3.3 mΩ @ 30A,10V |
Vgs (th) (maximum) for different Ids | 2.1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 18.9 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1205 pF @ 12 V |
Power dissipation (maximum) | 2.66W(Ta),46.3W(Tc) |