| Installation type | Surface mount |
| packing | TR |
| series | TrenchMOS™ |
| Part status | stop production |
| working temperature | -65°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SO |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 70 mΩ @ 4A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 880 pF @ 25 V |
| Power dissipation (maximum) | 2.5W(Ta) |