PSMN3R9-60XSQ
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PSMN3R9-60XSQ
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PSMN3R9-60XSQ

Brand:NXP
Model:PSMN3R9-60XSQ
stock:34981
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-220F
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 75A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 103 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5494 pF @ 25 V
Power dissipation (maximum) 55W(Tc)
Common problem
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