| Installation type | Surface mount | 
| packing | TR,CT | 
| Part status | On sale | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | X1-DFN1006-3 | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 50 V | 
| Current at 25 ° C - continuous drain (Id) | 200mA(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4V | 
| On resistance (maximum) for different Ids and Vgs | 6 Ω @ 100mA,4V | 
| Vgs (th) (maximum) for different Ids | 1.2V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 0.58 nC @ 4 V | 
| Vgs (max) | ±8V | 
| Input capacitance at different Vds (Ciss) (maximum) | 50.54 pF @ 25 V | 
| Power dissipation (maximum) | 425mW(Ta) |