Installation type | Surface mount |
packing | TR,CT |
series | Automotive, AEC-Q101 |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PowerDI5060-8 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 11.8A(Ta),123A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
On resistance (maximum) for different Ids and Vgs | 8.8 mΩ @ 13A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 56.4 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 4468 pF @ 50 V |
Power dissipation (maximum) | 1.5W(Ta) |