| Installation type | Surface mount | 
| packing | TR,CT | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | PowerDI5060-8 | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 60 V | 
| Current at 25 ° C - continuous drain (Id) | 16.5A(Ta),88A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 8 mΩ @ 20A,10V | 
| Vgs (th) (maximum) for different Ids | 4V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 40.1 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 2597 pF @ 30 V | 
| Power dissipation (maximum) | 3.3W(Ta) |