| Installation type | Through-Hole | 
| packing | TB | 
| Part status | stop production | 
| Encapsulation/Housing | E-Line(TO-92 compatible) | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 200 V | 
| Current at 25 ° C - continuous drain (Id) | 180mA(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 3V,5V | 
| On resistance (maximum) for different Ids and Vgs | 10 Ω @ 250mA,5V | 
| Vgs (th) (maximum) for different Ids | 1.5V @ 1mA | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 85 pF @ 25 V | 
| Power dissipation (maximum) | 700mW(Ta) |