| Installation type | Through-Hole | 
| packing | CT,TB | 
| Part status | On sale | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | TO-92 | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 200 V | 
| Current at 25 ° C - continuous drain (Id) | 120mA(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 25 Ω @ 150mA,10V | 
| Vgs (th) (maximum) for different Ids | 3.5V @ 1mA | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 100 pF @ 25 V | 
| Power dissipation (maximum) | 700mW(Ta) |