Installation type | Surface mount |
packing | TR,CT |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-23-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 4.3A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 53 mΩ @ 4.2A,4.5V |
Vgs (th) (maximum) for different Ids | 1.4V @ 250µA |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | 325 pF @ 10 V |
Power dissipation (maximum) | 1.4W(Ta) |