Installation type | Surface mount |
packing | TR,CT |
Part status | On sale |
working temperature | 150°C(TJ) |
Encapsulation/Housing | VESM |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 100mA(Ta) |
On resistance (maximum) for different Ids and Vgs | 8 Ω @ 50mA,4V |
Input capacitance at different Vds (Ciss) (maximum) | 12.2 pF @ 3 V |
Power dissipation (maximum) | 150mW(Ta) |