| Installation type | Surface mount | 
| packing | TR,CT | 
| series | Automotive, AEC-Q101, U-MOSVI | 
| Part status | On sale | 
| working temperature | 150°C | 
| Encapsulation/Housing | S-Mini | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 20 V | 
| Current at 25 ° C - continuous drain (Id) | 2A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V | 
| On resistance (maximum) for different Ids and Vgs | 150 mΩ @ 1A,4.5V | 
| Vgs (th) (maximum) for different Ids | 1V @ 1mA | 
| Gate charge (Qg) at different Vgs (maximum) | 4.6 nC @ 4.5 V | 
| Vgs (max) | +6V,-8V | 
| Input capacitance at different Vds (Ciss) (maximum) | 270 pF @ 10 V | 
| Power dissipation (maximum) | 600mW(Ta) |