| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSIII |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | USM |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 100mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4V |
| On resistance (maximum) for different Ids and Vgs | 3.2 Ω @ 10mA,4V |
| Vgs (th) (maximum) for different Ids | 1.5V @ 100µA |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 15.1 pF @ 3 V |
| Power dissipation (maximum) | 150mW(Ta) |