Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVI |
Part status | On sale |
working temperature | 150°C |
Encapsulation/Housing | ES6 |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 12 V |
Current at 25 ° C - continuous drain (Id) | 4.8A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 32 mΩ @ 3.5A,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 12.7 nC @ 4.5 V |
Vgs (max) | ±8V |
Input capacitance at different Vds (Ciss) (maximum) | 1040 pF @ 12 V |
Power dissipation (maximum) | 700mW(Ta) |