TPWR6003PL,L1Q
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TPWR6003PL,L1Q
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TPWR6003PL,L1Q

Brand:Toshiba
Model:TPWR6003PL,L1Q
stock:47149
Store:ShenZhen/Hongkong
Price:1+
$0.53
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series U-MOSIX-H
Part status On sale
working temperature 175°C
Encapsulation/Housing 8-DSOP Advance
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 150A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 0.6 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 110 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 10000 pF @ 15 V
Power dissipation (maximum) 960mW(Ta),170W(Tc)
Common problem
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