Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVII |
Part status | On sale |
working temperature | 150°C |
Encapsulation/Housing | VESM |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 250mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.2V,4.5V |
On resistance (maximum) for different Ids and Vgs | 1.4 Ω @ 150mA,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 100µA |
Vgs (max) | ±10V |
Input capacitance at different Vds (Ciss) (maximum) | 42 pF @ 10 V |
Power dissipation (maximum) | 150mW(Ta) |