| Installation type | Through-Hole | 
| packing | pipe | 
| Part status | On sale | 
| working temperature | 150°C(TJ) | 
| Encapsulation/Housing | TO-3P(N) | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 900 V | 
| Current at 25 ° C - continuous drain (Id) | 9A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 1.3 Ω @ 4.5A,10V | 
| Vgs (th) (maximum) for different Ids | 4V @ 900µA | 
| Gate charge (Qg) at different Vgs (maximum) | 46 nC @ 10 V | 
| Vgs (max) | ±30V | 
| Input capacitance at different Vds (Ciss) (maximum) | 2000 pF @ 25 V | 
| Power dissipation (maximum) | 250W(Tc) |