| Installation type | Through-Hole |
| packing | pipe |
| series | U-MOSIX-H |
| Part status | On sale |
| working temperature | 175°C(TJ) |
| Encapsulation/Housing | TO-220SIS |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 68A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 7.2 mΩ @ 15A,4.5V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 500µA |
| Gate charge (Qg) at different Vgs (maximum) | 48.2 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 3280 pF @ 30 V |
| Power dissipation (maximum) | 36W(Tc) |